SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
♠ Tlhaloso ea Sehlahisoa
| Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
| Moetsi: | Vishay |
| Sehlopha sa Sehlahisoa: | MOSFET |
| RoHS: | Lintlha |
| Theknoloji: | Si |
| Mounting Style: | SMD/SMT |
| Sephutheloana/Nyeto: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Nomoro ea Likanale: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 5.3 A |
| Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 58 mhm |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 13 nC |
| Mocheso o fokolang oa ho sebetsa: | -55 C |
| Boholo ba Thempereichara ea Tšebetso: | + 150 C |
| Pd - Phello ea Matla: | 3.1 W |
| Mokhoa oa Channel: | Ntlafatso |
| Lebitso la khoebo: | TrenchFET |
| Sephutheloana: | Reel |
| Sephutheloana: | Khaola Theipi |
| Sephutheloana: | MouseReel |
| Lebitso: | Li-Semiconductors tsa Vishay |
| Tlhophiso: | Tse peli |
| Nako ea hoetla: | 10 ns |
| Transconductance ea ho Fetela - Min: | 15 S |
| Mofuta oa Sehlahisoa: | MOSFET |
| Nako ea ho Phahamisa: | 15 ns, 65 ns |
| Letoto: | SI9 |
| Bongata ba Pakete ea Feme: | 2500 |
| Sehlopha-potlana: | MOSFETs |
| Mofuta oa Transistor: | 2 N-Channel |
| Nako e Tloaelehileng ea ho Lieha: | 10 ns, 15 ns |
| Nako e Tloaelehileng ea ho Lata Nako: | 15 ns, 20 ns |
| Karolo # Litlhaloso: | SI9945BDY-GE3 |
| Boima ba Yuniti: | 750 mg |
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