IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Tlhaloso ea Sehlahisoa
| Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
| Moetsi: | Infineon |
| Sehlopha sa Sehlahisoa: | MOSFET |
| RoHS: | Lintlha |
| Theknoloji: | Si |
| Mounting Style: | SMD/SMT |
| Sephutheloana/Nyeto: | HO YA-252-3 |
| Transistor Polarity: | N-Channel |
| Nomoro ea Likanale: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 50 A |
| Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 9.3 mOhm |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 18.2 nC |
| Mocheso o fokolang oa ho sebetsa: | -55 C |
| Boholo ba Thempereichara ea Tšebetso: | + 175 C |
| Pd - Phello ea Matla: | 41 W |
| Mokhoa oa Channel: | Ntlafatso |
| Tšoaneleho: | AEC-Q101 |
| Lebitso la khoebo: | OptiMOS |
| Sephutheloana: | Reel |
| Sephutheloana: | Khaola Theipi |
| Lebitso: | Infineon Technologies |
| Tlhophiso: | Motho a le mong |
| Nako ea hoetla: | 5 ns |
| Bolelele: | 2.3 limilimithara |
| Bolelele: | 6.5 limilimithara |
| Mofuta oa Sehlahisoa: | MOSFET |
| Nako ea ho Phahamisa: | 7 ns |
| Letoto: | OptiMOS-T2 |
| Bongata ba Pakete ea Feme: | 2500 |
| Sehlopha-potlana: | MOSFETs |
| Mofuta oa Transistor: | 1 N-Channel |
| Nako e Tloaelehileng ea ho Lieha: | 4 ns |
| Nako e Tloaelehileng ea ho Lata Nako: | 5 ns |
| Bophara: | 6.22 limilimithara |
| Karolo # Litlhaloso: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Boima ba Yuniti: | 330 mg |
• N-channel – Mokhoa oa ntlafatso
• AEC e tšoanelehang
• MSL1 ho fihla ho 260°C tlhoro e phalloang hape
• 175 ° C mocheso o sebetsang
• Sehlahiswa se Setala (RoHS se dumellana le)
• 100% Avalanche e lekoa
