FDD4N60NZ MOSFET 2.5A Output Current GateDrive Optocopler

Tlhaloso e Khutšoanyane:

Baetsi: HO Semiconductor

Sehlopha sa Lihlahisoa: Transistors - FETs, MOSFETs - E le 'ngoe

Leqephe la lintlha:FDD4N60NZ

Tlhaloso: MOSFET N CH 600V 3.4A DPAK

Boemo ba RoHS: E lumellana le RoHS


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

♠ Tlhaloso ea Sehlahisoa

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Moetsi: qala
Sehlopha sa Sehlahisoa: MOSFET
RoHS: Lintlha
Theknoloji: Si
Mounting Style: SMD/SMT
Sephutheloana / Taba: DPAK-3
Transistor Polarity: N-Channel
Nomoro ea Likanale: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: 1.7 A
Rds On - Ho hanyetsa Mohloli oa Drain-Source: 1.9 Ohm
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 8.3 nC
Mocheso o fokolang oa ho sebetsa: -55 C
Boholo ba Thempereichara ea Tšebetso: + 150 C
Pd - Phello ea Matla: 114 W
Mokhoa oa Channel: Ntlafatso
Lebitso la khoebo: UniFET
Sephutheloana: Reel
Sephutheloana: Khaola Theipi
Sephutheloana: MouseReel
Lebitso: qalami/ Motlotlehi
Tlhophiso: Motho a le mong
Nako ea hoetla: 12.8 ns
Transconductance ea ho Fetela - Min: 3.4 S
Bolelele: 2.39 limilimithara
Bolelele: 6.73 limilimithara
Sehlahisoa: MOSFET
Mofuta oa Sehlahisoa: MOSFET
Nako ea ho Phahamisa: 15.1 ns
Letoto: FDD4N60NZ
Bongata ba Pakete ea Feme: 2500
Sehlopha-potlana: MOSFETs
Mofuta oa Transistor: 1 N-Channel
Nako e Tloaelehileng ea ho Lieha: 30.2 ns
Nako e Tloaelehileng ea ho Lata Nako: 12.7 ns
Bophara: 6.22 limilimithara
Boima ba Yuniti: 0.011640 oz

 


  • E fetileng:
  • E 'ngoe:

  • Lihlahisoa tse Amanang