SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8
♠ Tlhaloso ea Sehlahisoa
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
Moetsi: | Vishay |
Sehlopha sa Sehlahisoa: | MOSFET |
RoHS: | Lintlha |
Theknoloji: | Si |
Mounting Style: | SMD/SMT |
Sephutheloana/Nyeto: | SOIC-8 |
Transistor Polarity: | P-Channel |
Nomoro ea Likanale: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 5.7 A |
Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 42 mhm |
Vgs - Gate-Source Voltage: | - 10 V, + 10 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Qg - Gate Charge: | 24 nC |
Mocheso o fokolang oa ho sebetsa: | -55 C |
Boholo ba Thempereichara ea Tšebetso: | + 150 C |
Pd - Phello ea Matla: | 2.5 W |
Mokhoa oa Channel: | Ntlafatso |
Lebitso la khoebo: | TrenchFET |
Sephutheloana: | Reel |
Sephutheloana: | Khaola Theipi |
Sephutheloana: | MouseReel |
Lebitso: | Li-Semiconductors tsa Vishay |
Tlhophiso: | Motho a le mong |
Nako ea hoetla: | 30 ns |
Transconductance ea ho Fetela - Min: | 13 S |
Mofuta oa Sehlahisoa: | MOSFET |
Nako ea ho Phahamisa: | 42 ns |
Letoto: | SI9 |
Bongata ba Pakete ea Feme: | 2500 |
Sehlopha-potlana: | MOSFETs |
Mofuta oa Transistor: | 1 P-Channel |
Nako e Tloaelehileng ea ho Lieha: | 30 ns |
Nako e Tloaelehileng ea ho Lata Nako: | 14 ns |
Karolo # Litlhaloso: | SI9435BDY-E3 |
Boima ba Yuniti: | 750 mg |
• TrenchFET® power MOSFETs
• Sephutheloana se tlaase sa PowerPAK® sa ho hanyetsa mocheso se nang le profilEC e tlaase ea 1.07 mm