SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8

Tlhaloso e Khutšoanyane:

Baetsi: Vishay
Sehlopha sa lihlahisoa:MOSFET
Leqephe la lintlha:SI7461DP-T1-GE3
Tlhaloso: MOSFET P-CH 60V 8.6A PPAK SO-8
Boemo ba RoHS: E lumellana le RoHS


Lintlha tsa Sehlahisoa

Likaroloana

Li-tag tsa Sehlahisoa

♠ Tlhaloso ea Sehlahisoa

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Moetsi: Vishay
Sehlopha sa Sehlahisoa: MOSFET
RoHS: Lintlha
Theknoloji: Si
Mounting Style: SMD/SMT
Sephutheloana/Nyeto: SOIC-8
Transistor Polarity: P-Channel
Nomoro ea Likanale: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: 5.7 A
Rds On - Ho hanyetsa Mohloli oa Drain-Source: 42 mhm
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 24 nC
Mocheso o fokolang oa ho sebetsa: -55 C
Boholo ba Thempereichara ea Tšebetso: + 150 C
Pd - Phello ea Matla: 2.5 W
Mokhoa oa Channel: Ntlafatso
Lebitso la khoebo: TrenchFET
Sephutheloana: Reel
Sephutheloana: Khaola Theipi
Sephutheloana: MouseReel
Lebitso: Li-Semiconductors tsa Vishay
Tlhophiso: Motho a le mong
Nako ea hoetla: 30 ns
Transconductance ea ho Fetela - Min: 13 S
Mofuta oa Sehlahisoa: MOSFET
Nako ea ho Phahamisa: 42 ns
Letoto: SI9
Bongata ba Pakete ea Feme: 2500
Sehlopha-potlana: MOSFETs
Mofuta oa Transistor: 1 P-Channel
Nako e Tloaelehileng ea ho Lieha: 30 ns
Nako e Tloaelehileng ea ho Lata Nako: 14 ns
Karolo # Litlhaloso: SI9435BDY-E3
Boima ba Yuniti: 750 mg

  • E fetileng:
  • E 'ngoe:

  • • TrenchFET® power MOSFETs

    • Sephutheloana se tlaase sa PowerPAK® sa ho hanyetsa mocheso se nang le profilEC e tlaase ea 1.07 mm

    Lihlahisoa tse Amanang