SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ Tlhaloso ea Sehlahisoa
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
Moetsi: | Vishay |
Sehlopha sa Sehlahisoa: | MOSFET |
RoHS: | Lintlha |
Theknoloji: | Si |
Mounting Style: | SMD/SMT |
Sephutheloana/Nyeto: | PowerPAK-1212-8 |
Transistor Polarity: | P-Channel |
Nomoro ea Likanale: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 3.8 A |
Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 1.05 Ohms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Qg - Gate Charge: | 25 nC |
Mocheso o fokolang oa ho sebetsa: | - 50 C |
Boholo ba Thempereichara ea Tšebetso: | + 150 C |
Pd - Phello ea Matla: | 52 W |
Mokhoa oa Channel: | Ntlafatso |
Lebitso la khoebo: | TrenchFET |
Sephutheloana: | Reel |
Sephutheloana: | Khaola Theipi |
Sephutheloana: | MouseReel |
Lebitso: | Li-Semiconductors tsa Vishay |
Tlhophiso: | Motho a le mong |
Nako ea hoetla: | 12 ns |
Transconductance ea ho Fetela - Min: | 4 S |
Bolelele: | 1.04 limilimithara |
Bolelele: | 3.3 limilimithara |
Mofuta oa Sehlahisoa: | MOSFET |
Nako ea ho Phahamisa: | 11 ns |
Letoto: | SI7 |
Bongata ba Pakete ea Feme: | 3000 |
Sehlopha-potlana: | MOSFETs |
Mofuta oa Transistor: | 1 P-Channel |
Nako e Tloaelehileng ea ho Lieha: | 27 ns |
Nako e Tloaelehileng ea ho Lata Nako: | 9 ns |
Bophara: | 3.3 limilimithara |
Karolo # Litlhaloso: | SI7119DN-GE3 |
Boima ba Yuniti: | 1 g |
• Halogen-free Ho ea ka IEC 61249-2-21 E fumaneha
• TrenchFET® Power MOSFET
• Thermal Resistance PowerPAK® Package e nang le Boemo bo Bonyane le Boemo bo Tlase ba 1.07 mm
• 100 % UIS le Rg Tested
• Clamp e sebetsang ho Lisebelisoa tsa Matla a Hare a DC/DC