SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8

Tlhaloso e Khutšoanyane:

Baetsi: Vishay
Sehlopha sa lihlahisoa:MOSFET
Leqephe la lintlha:SI7119DN-T1-GE3
Tlhaloso:MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
Boemo ba RoHS: E lumellana le RoHS


Lintlha tsa Sehlahisoa

Likaroloana

LIKOPO

Li-tag tsa Sehlahisoa

♠ Tlhaloso ea Sehlahisoa

Sehlahisoa Tšobotsi Boleng ba Tšobotsi
Moetsi: Vishay
Sehlopha sa Sehlahisoa: MOSFET
RoHS: Lintlha
Theknoloji: Si
Mounting Style: SMD/SMT
Sephutheloana/Nyeto: PowerPAK-1212-8
Transistor Polarity: P-Channel
Nomoro ea Likanale: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: 3.8 A
Rds On - Ho hanyetsa Mohloli oa Drain-Source: 1.05 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 25 nC
Mocheso o fokolang oa ho sebetsa: - 50 C
Boholo ba Thempereichara ea Tšebetso: + 150 C
Pd - Phello ea Matla: 52 W
Mokhoa oa Channel: Ntlafatso
Lebitso la khoebo: TrenchFET
Sephutheloana: Reel
Sephutheloana: Khaola Theipi
Sephutheloana: MouseReel
Lebitso: Li-Semiconductors tsa Vishay
Tlhophiso: Motho a le mong
Nako ea hoetla: 12 ns
Transconductance ea ho Fetela - Min: 4 S
Bolelele: 1.04 limilimithara
Bolelele: 3.3 limilimithara
Mofuta oa Sehlahisoa: MOSFET
Nako ea ho Phahamisa: 11 ns
Letoto: SI7
Bongata ba Pakete ea Feme: 3000
Sehlopha-potlana: MOSFETs
Mofuta oa Transistor: 1 P-Channel
Nako e Tloaelehileng ea ho Lieha: 27 ns
Nako e Tloaelehileng ea ho Lata Nako: 9 ns
Bophara: 3.3 limilimithara
Karolo # Litlhaloso: SI7119DN-GE3
Boima ba Yuniti: 1 g

  • E fetileng:
  • E 'ngoe:

  • • Halogen-free Ho ea ka IEC 61249-2-21 E fumaneha

    • TrenchFET® Power MOSFET

    • Thermal Resistance PowerPAK® Package e nang le Boemo bo Bonyane le Boemo bo Tlase ba 1.07 mm

    • 100 % UIS le Rg Tested

    • Clamp e sebetsang ho Lisebelisoa tsa Matla a Hare a DC/DC

    Lihlahisoa tse Amanang