SI3417DV-T1-GE3 MOSFET 30V Vds 20V Vgs TSOP-6
♠ Tlhaloso ea Sehlahisoa
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
Moetsi: | Vishay |
Sehlopha sa Sehlahisoa: | MOSFET |
RoHS: | Lintlha |
Theknoloji: | Si |
Mounting Style: | SMD/SMT |
Sephutheloana / Taba: | TSOP-6 |
Transistor Polarity: | P-Channel |
Nomoro ea Likanale: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 8 A |
Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 36 mhm |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 50 nC |
Mocheso o fokolang oa ho sebetsa: | -55 C |
Boholo ba Thempereichara ea Tšebetso: | + 150 C |
Pd - Phello ea Matla: | 4.2 W |
Mokhoa oa Channel: | Ntlafatso |
Lebitso la khoebo: | TrenchFET |
Letoto: | SI3 |
Sephutheloana: | Reel |
Sephutheloana: | Khaola Theipi |
Sephutheloana: | MouseReel |
Lebitso: | Li-Semiconductors tsa Vishay |
Tlhophiso: | Motho a le mong |
Bolelele: | 1.1 limilimithara |
Bolelele: | 3.05 limilimithara |
Mofuta oa Sehlahisoa: | MOSFET |
Bongata ba Pakete ea Feme: | 3000 |
Sehlopha-potlana: | MOSFETs |
Bophara: | 1.65 limilimithara |
Boima ba Yuniti: | 0.000705 oz |
• TrenchFET® Power MOSFET
• 100 % Rg le UIS e Lekoa
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