SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ Tlhaloso ea Sehlahisoa
| Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
| Moetsi: | Vishay |
| Sehlopha sa Sehlahisoa: | MOSFET |
| Theknoloji: | Si |
| Mounting Style: | SMD/SMT |
| Sephutheloana / Taba: | SOT-23-3 |
| Transistor Polarity: | P-Channel |
| Nomoro ea Likanale: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 5.8 A |
| Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 35 mOhm |
| Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 12 nC |
| Mocheso o fokolang oa ho sebetsa: | -55 C |
| Boholo ba Thempereichara ea Tšebetso: | + 150 C |
| Pd - Phello ea Matla: | 1.7 W |
| Mokhoa oa Channel: | Ntlafatso |
| Lebitso la khoebo: | TrenchFET |
| Sephutheloana: | Reel |
| Sephutheloana: | Khaola Theipi |
| Sephutheloana: | MouseReel |
| Lebitso: | Li-Semiconductors tsa Vishay |
| Tlhophiso: | Motho a le mong |
| Nako ea hoetla: | 10 ns |
| Bolelele: | 1.45 limilimithara |
| Bolelele: | 2.9 limilimithara |
| Mofuta oa Sehlahisoa: | MOSFET |
| Nako ea ho Phahamisa: | 20 ns |
| Letoto: | SI2 |
| Bongata ba Pakete ea Feme: | 3000 |
| Sehlopha-potlana: | MOSFETs |
| Mofuta oa Transistor: | 1 P-Channel |
| Nako e Tloaelehileng ea ho Lieha: | 40 ns |
| Nako e Tloaelehileng ea ho Lata Nako: | 20 ns |
| Bophara: | 1.6 limilimithara |
| Karolo # Litlhaloso: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Boima ba Yuniti: | 0.000282 oz |
• Halogen-free Ho ea ka IEC 61249-2-21 Tlhaloso
• TrenchFET® Power MOSFET
• 100 % Rg E Lekoa
• E lumellana le RoHS Directive 2002/95/EC
• Loaro switjha bakeng sa Lisebelisoa tse nkehang
• DC/DC Converter
