SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Tlhaloso ea Sehlahisoa
| Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
| Moetsi: | Vishay |
| Sehlopha sa Sehlahisoa: | MOSFET |
| RoHS: | Lintlha |
| Theknoloji: | Si |
| Mounting Style: | SMD/SMT |
| Sephutheloana/Lekhetlo: | SC-89-6 |
| Transistor Polarity: | N-Channel, P-Channel |
| Nomoro ea Likanale: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 500 mA |
| Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 1.4 Ohms, 4 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 750 pC, 1.7 nC |
| Mocheso o fokolang oa ho sebetsa: | -55 C |
| Boholo ba Thempereichara ea Tšebetso: | + 150 C |
| Pd - Phello ea Matla: | 280 mW |
| Mokhoa oa Channel: | Ntlafatso |
| Lebitso la khoebo: | TrenchFET |
| Sephutheloana: | Reel |
| Sephutheloana: | Khaola Theipi |
| Sephutheloana: | MouseReel |
| Lebitso: | Li-Semiconductors tsa Vishay |
| Tlhophiso: | Tse peli |
| Transconductance ea ho Fetela - Min: | 200 mS, 100 mS |
| Bolelele: | 0.6 limilimithara |
| Bolelele: | 1.66 limilimithara |
| Mofuta oa Sehlahisoa: | MOSFET |
| Letoto: | SI1 |
| Bongata ba Pakete ea Feme: | 3000 |
| Sehlopha-potlana: | MOSFETs |
| Mofuta oa Transistor: | 1 N-Channel, 1 P-Channel |
| Nako e Tloaelehileng ea ho Lieha: | 20 ns, 35 ns |
| Nako e Tloaelehileng ea ho Lata Nako: | 15 ns, 20 ns |
| Bophara: | 1.2 limilimithara |
| Karolo # Litlhaloso: | SI1029X-GE3 |
| Boima ba Yuniti: | 32 mg |
• Halogen-free Ho ea ka IEC 61249-2-21 Tlhaloso
• TrenchFET® Power MOSFETs
• Molato o Monyenyane Haholo
• Phetoho e Phahameng
• Ha ba hanyetsane haholo:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Boemo bo Tlase: ± 2 V (mofuta.)
• Lebelo la ho Fetola ka Potlako: 15 ns (thaepa.)
• Heke-Mohloli oa ESD e Sirelelitsoeng: 2000 V
• E lumellana le RoHS Directive 2002/95/EC
• Fetola Digital Transistor, Level-Shifter
• Battery Opereishene Systems
• Lipotoloho tsa Phepelo ea Matla
