NTJD4001NT1G MOSFET 30V 250mA Dual N-Channel
♠ Tlhaloso ea Sehlahisoa
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
Moetsi: | qala |
Sehlopha sa Sehlahisoa: | MOSFET |
RoHS: | Lintlha |
Theknoloji: | Si |
Mounting Style: | SMD/SMT |
Sephutheloana / Taba: | SC-88-6 |
Transistor Polarity: | N-Channel |
Nomoro ea Likanale: | 2 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 250 mA |
Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 1.5 Ohms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Qg - Gate Charge: | 900 pc |
Mocheso o fokolang oa ho sebetsa: | -55 C |
Boholo ba Thempereichara ea Tšebetso: | + 150 C |
Pd - Phello ea Matla: | 272 mW |
Mokhoa oa Channel: | Ntlafatso |
Sephutheloana: | Reel |
Sephutheloana: | Khaola Theipi |
Sephutheloana: | MouseReel |
Lebitso: | qala |
Tlhophiso: | Tse peli |
Nako ea hoetla: | 82 ns |
Transconductance ea ho Fetela - Min: | 80 mS |
Bolelele: | 0.9 limilimithara |
Bolelele: | 2 mm |
Sehlahisoa: | Letšoao le Lenyane la MOSFET |
Mofuta oa Sehlahisoa: | MOSFET |
Nako ea ho Phahamisa: | 23 ns |
Letoto: | NTJD4001N |
Bongata ba Pakete ea Feme: | 3000 |
Sehlopha-potlana: | MOSFETs |
Mofuta oa Transistor: | 2 N-Channel |
Nako e Tloaelehileng ea ho Lieha: | 94 ns |
Nako e Tloaelehileng ea ho Lata Nako: | 17 ns |
Bophara: | 1.25 limilimithara |
Boima ba Yuniti: | 0.010229 oz |
• Tefiso ea Heke e Tlaase bakeng sa ho Fetoha ka Potlako
• Melato e Nyane − 30% E Nyane ho feta TSOP−6
• Heke e Sirelelitsoeng ea ESD
• AEC Q101 Qualified - NVTJD4001N
• Lisebelisoa tsena ha li na Pb−Mahala 'me li lumellana le RoHS
• Phetoho ea Mojaro o Tlaase
• Li-Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
• Buck Converters
• Liphetoho tsa maemo