IXFA22N65X2 MOSFET 650V/22A Ultra Junction X2
♠ Tlhaloso ea Sehlahisoa
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
Moetsi: | IXYS |
Sehlopha sa Sehlahisoa: | MOSFET |
Theknoloji: | Si |
Mounting Style: | SMD/SMT |
Sephutheloana / Taba: | HO TSA-263-3 |
Transistor Polarity: | N-Channel |
Nomoro ea Likanale: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 22 A |
Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 160 mOhms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
Qg - Gate Charge: | 38 nC |
Mocheso o fokolang oa ho sebetsa: | -55 C |
Boholo ba Thempereichara ea Tšebetso: | + 150 C |
Pd - Phello ea Matla: | 360 W |
Mokhoa oa Channel: | Ntlafatso |
Lebitso la khoebo: | HiPerFET |
Sephutheloana: | Tube |
Lebitso: | IXYS |
Tlhophiso: | Motho a le mong |
Nako ea hoetla: | 10 ns |
Transconductance ea ho Fetela - Min: | 8 S |
Mofuta oa Sehlahisoa: | MOSFET |
Nako ea ho Phahamisa: | 35 ns |
Letoto: | 650V Ultra Junction X2 |
Bongata ba Pakete ea Feme: | 50 |
Sehlopha-potlana: | MOSFETs |
Nako e Tloaelehileng ea ho Lieha: | 33 ns |
Nako e Tloaelehileng ea ho Lata Nako: | 38 ns |
Boima ba Yuniti: | 0.139332 oz |