IXFA22N65X2 MOSFET 650V/22A Ultra Junction X2
♠ Tlhaloso ea Sehlahisoa
| Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
| Moetsi: | IXYS |
| Sehlopha sa Sehlahisoa: | MOSFET |
| Theknoloji: | Si |
| Mounting Style: | SMD/SMT |
| Sephutheloana / Taba: | HO TSA-263-3 |
| Transistor Polarity: | N-Channel |
| Nomoro ea Likanale: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 22 A |
| Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 160 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Qg - Gate Charge: | 38 nC |
| Mocheso o fokolang oa ho sebetsa: | -55 C |
| Boholo ba Thempereichara ea Tšebetso: | + 150 C |
| Pd - Phello ea Matla: | 360 W |
| Mokhoa oa Channel: | Ntlafatso |
| Lebitso la khoebo: | HiPerFET |
| Sephutheloana: | Tube |
| Lebitso: | IXYS |
| Tlhophiso: | Motho a le mong |
| Nako ea hoetla: | 10 ns |
| Transconductance ea ho Fetela - Min: | 8 S |
| Mofuta oa Sehlahisoa: | MOSFET |
| Nako ea ho Phahamisa: | 35 ns |
| Letoto: | 650V Ultra Junction X2 |
| Bongata ba Pakete ea Feme: | 50 |
| Sehlopha-potlana: | MOSFETs |
| Nako e Tloaelehileng ea ho Lieha: | 33 ns |
| Nako e Tloaelehileng ea ho Lata Nako: | 38 ns |
| Boima ba Yuniti: | 0.139332 oz |
