Tlhaloso: IKW50N65ES5XKSA1 IGBT Transistors INDUSTRY 14
♠ Tlhaloso ea Sehlahisoa
| Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
| Moetsi: | Infineon |
| Sehlopha sa Sehlahisoa: | Li-transistors tsa IGBT |
| Theknoloji: | Si |
| Sephutheloana / Taba: | HO YA-247-3 |
| Mounting Style: | Ka Hole |
| Tlhophiso: | Motho a le mong |
| Mobokelli- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Maximum Gate Emitter Voltage: | 20 V |
| 'Mokelli ea Tsoelang Pele oa Hona Joale ho 25 C: | 80 A |
| Pd - Phello ea Matla: | 274 W |
| Mocheso o fokolang oa ho sebetsa: | - 40 C |
| Boholo ba Thempereichara ea Tšebetso: | + 175 C |
| Letoto: | TRENCHSTOP 5 S5 |
| Sephutheloana: | Tube |
| Lebitso: | Infineon Technologies |
| Gate-Emitter Leakage Current: | 100 nA |
| Bolelele: | 20.7 limilimithara |
| Bolelele: | 15.87 limilimithara |
| Mofuta oa Sehlahisoa: | Li-transistors tsa IGBT |
| Bongata ba Pakete ea Feme: | 240 |
| Sehlopha-potlana: | Li-IGBTs |
| Lebitso la khoebo: | TŠEPANE |
| Bophara: | 5.31 limilimithara |
| Karolo # Litlhaloso: | IKW50N65ES5 SP001319682 |
| Boima ba Yuniti: | 0.213537 oz |
Phaello ea theknoloji ea HighspeedS5
•Highspeedsmoothswitchingdeviceforhard&softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•Plugandplay sebaka sa liGBT tsa moloko o fetileng
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTe tletsetletseRAPID1fastantiparalleldiode
•Mocheso o phahameng oa ho kopana175°C
•Ea tšoaneleha ho ea kaJEDECfortargetapplications
•Pb-freeleadplating;RoHS e lumellana
• CompleteproductrumandPSpiceModels: http://www.infineon.com/igbt/
•Resonantconverters
•Matla a sa senyeheng
• Li-welding converters
•Midtohighrangeswitchingfrequencyconverters
