Tlhaloso: IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
♠ Tlhaloso ea Sehlahisoa
| Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
| Moetsi: | Infineon |
| Sehlopha sa Sehlahisoa: | Li-transistors tsa IGBT |
| Theknoloji: | Si |
| Sephutheloana / Taba: | HO YA-247-3 |
| Mounting Style: | Ka Hole |
| Tlhophiso: | Motho a le mong |
| Mobokelli- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Maximum Gate Emitter Voltage: | 20 V |
| 'Mokelli ea Tsoelang Pele oa Hona Joale ho 25 C: | 80 A |
| Pd - Phello ea Matla: | 275 W |
| Mocheso o fokolang oa ho sebetsa: | - 40 C |
| Boholo ba Thempereichara ea Tšebetso: | + 175 C |
| Letoto: | Trenchstop IGBT5 |
| Sephutheloana: | Tube |
| Lebitso: | Infineon Technologies |
| Gate-Emitter Leakage Current: | 100 nA |
| Bolelele: | 20.7 limilimithara |
| Bolelele: | 15.87 limilimithara |
| Mofuta oa Sehlahisoa: | Li-transistors tsa IGBT |
| Bongata ba Pakete ea Feme: | 240 |
| Sehlopha-potlana: | Li-IGBTs |
| Lebitso la khoebo: | TŠEPANE |
| Bophara: | 5.31 limilimithara |
| Karolo # Litlhaloso: | IKW50N65EH5 SP001257944 |
| Boima ba Yuniti: | 0.213383 oz |
HighspeedH5technology fana
•Ho sebetsa hantle ka ho Fetisisa ka ho feto-fetoha ka thata le li-topology tse monate
•Plugandplay sebaka sa liGBT tsa moloko o fetileng
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTe tletse ka tekanyo e felletseng RAPID1fastandsoftantiparallel diode
•Mocheso o phahameng oa ho kopana175°C
•Ea tšoaneleha ho ea kaJEDECfortargetapplications
•Pb-freeleadplating;RoHS e lumellana
• CompleteproductrumandPSpiceModels: http://www.infineon.com/igbt/
•Matla a sa senyeheng
•Solarconverters
• Li-welding converters
•Midtohighrangeswitchingfrequencyconverters
