FDV301N MOSFET N-Ch Digital
♠ Tlhaloso ea Sehlahisoa
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
Moetsi: | qala |
Sehlopha sa Sehlahisoa: | MOSFET |
RoHS: | Lintlha |
Theknoloji: | Si |
Mounting Style: | SMD/SMT |
Sephutheloana / Taba: | SOT-23-3 |
Transistor Polarity: | N-Channel |
Nomoro ea Likanale: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 220 mA |
Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 5 ohm |
Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage: | 700 mV |
Qg - Gate Charge: | 700 pc |
Mocheso o fokolang oa ho sebetsa: | -55 C |
Boholo ba Thempereichara ea Tšebetso: | + 150 C |
Pd - Phello ea Matla: | 350 mW |
Mokhoa oa Channel: | Ntlafatso |
Sephutheloana: | Reel |
Sephutheloana: | Khaola Theipi |
Sephutheloana: | MouseReel |
Lebitso: | qalami/ Motlotlehi |
Tlhophiso: | Motho a le mong |
Nako ea hoetla: | 6 ns |
Transconductance ea ho Fetela - Min: | 0.2 S |
Bolelele: | 1.2 limilimithara |
Bolelele: | 2.9 limilimithara |
Sehlahisoa: | Letšoao le Lenyane la MOSFET |
Mofuta oa Sehlahisoa: | MOSFET |
Nako ea ho Phahamisa: | 6 ns |
Letoto: | FDV301N |
Bongata ba Pakete ea Feme: | 3000 |
Sehlopha-potlana: | MOSFETs |
Mofuta oa Transistor: | 1 N-Channel |
Mofuta: | FET |
Nako e Tloaelehileng ea ho Lieha: | 3.5 ns |
Nako e Tloaelehileng ea ho Lata Nako: | 3.2 ns |
Bophara: | 1.3 limilimithara |
Karolo # Litlhaloso: | FDV301N_NL |
Boima ba Yuniti: | 0.000282 oz |
♠ Digital FET, N-Channel FDV301N, FDV301N-F169
Transistor ena ea N−Channel logic level enhancement field effect transistor e hlahisoa ho sebelisoa thekenoloji ea onsemi, e phahameng ea lisele, le theknoloji ea DMOS.Ts'ebetso ena e phahameng haholo e etselitsoe ho fokotsa khanyetso ea mmuso.Sesebediswa sena se etselitsoe haholo-holo lits'ebetso tsa motlakase o tlase e le sebaka sa li-transistors tsa dijithale.Kaha ha ho hlokahale lihanyetsi tsa leeme, N−channel FET ena e ka nka sebaka sa li-transistors tse fapaneng tsa dijithale, ka boleng bo fapaneng ba ho hanyetsa.
• 25 V, 0,22 A Tsoelang Pele, 0.5 Tlhōrō
♦ RDS(ka) = 5 @ VGS = 2.7 V
♦ RDS(ka) = 4 @ VGS = 4.5 V
• Litlhoko tse tlase haholo tsa Heke Drive tse lumellang Ts'ebetso e Otlolohileng Lipotolohong tsa 3 V.VGS(th) <1.06 V
• Gate−Mohloli oa Zener bakeng sa ESD Ruggedness.> 6 kV Mohlala wa Mmele wa Motho
• Tlohela li-Transistors tse ngata tsa NPN tsa Digital ka One DMOS FET
• Sesebelisoa sena ha se Pb−Mahala ebile ha se na Halide