Lintlha tsa Sehlahisoa
Li-tag tsa Sehlahisoa
Sehlahisoa Tšobotsi | Boleng ba Tšobotsi |
Moetsi: | qala |
Sehlopha sa Sehlahisoa: | MOSFET |
RoHS: | Lintlha |
Theknoloji: | Si |
Mounting Style: | SMD/SMT |
Sephutheloana / Taba: | SSOT-6 |
Transistor Polarity: | N-Channel |
Nomoro ea Likanale: | 2 Channel |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Id - Mokelikeli o Tsoelang Pele oa Hona Joale: | 680 mA |
Rds On - Ho hanyetsa Mohloli oa Drain-Source: | 450 mOhms |
Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage: | 650 mV |
Qg - Gate Charge: | 2.3 nC |
Mocheso o fokolang oa ho sebetsa: | -55 C |
Boholo ba Thempereichara ea Tšebetso: | + 150 C |
Pd - Phello ea Matla: | 900 mW |
Mokhoa oa Channel: | Ntlafatso |
Sephutheloana: | Reel |
Sephutheloana: | Khaola Theipi |
Sephutheloana: | MouseReel |
Lebitso: | qalami/ Motlotlehi |
Tlhophiso: | Tse peli |
Nako ea hoetla: | 8.5 ns |
Transconductance ea ho Fetela - Min: | 0.145 S |
Bolelele: | 1.1 limilimithara |
Bolelele: | 2.9 limilimithara |
Sehlahisoa: | Letšoao le Lenyane la MOSFET |
Mofuta oa Sehlahisoa: | MOSFET |
Nako ea ho Phahamisa: | 8.5 ns |
Letoto: | FDC6303N |
Bongata ba Pakete ea Feme: | 3000 |
Sehlopha-potlana: | MOSFETs |
Mofuta oa Transistor: | 2 N-Channel |
Mofuta: | FET |
Nako e Tloaelehileng ea ho Lieha: | 17 ns |
Nako e Tloaelehileng ea ho Lata Nako: | 3 ns |
Bophara: | 1.6 limilimithara |
Karolo # Litlhaloso: | FDC6303N_NL |
Boima ba Yuniti: | 0.001270 oz |
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